inchange semiconductor isc product specification isc silicon npn power transistor 2SC937 description high breakdown voltage- : v cbo = 1200v(min) high reliability applications designed for tv horizontal defle ction output applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 1200 v v ceo collector-emitter voltage 500 v v ebo emitter-base voltage 6 v i c collector current- continuous 2.5 a i cp collector current-pulse 6 a p c collector power dissipation @ t c = 25 22 w t j junction temperature 125 t stg storage temperature range -45~125 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SC937 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 10ma; r be = 500 v v ce (sat) collector-emitter saturation voltage i c = 2.5a; i b = 0.8a 5.0 v v be (sat) base-emitter saturation voltage i c = 2.5a; i b = 0.8a 1.8 v i cbx collector cutoff current v cb = 1200v; v eb = 1.5v 1 ma i ebo emitter cutoff current v eb = 6v; i c = 0 0.2 ma t f fall time i c = 2.5a, i b 1 = 0.8a, i b 2 = -1.1a; l b = 10 h 1.2 s isc website www.iscsemi.cn 2
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